Cooled reflective adapter plate for a deposition chamber

ABSTRACT

In one embodiment, An adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Patent ApplicationSer. No. 61/638,381, (Attorney Docket No. 017022USAL), filed Apr. 25,2012, and U.S. Provisional Patent Application Ser. No. 61/719,019(Attorney Docket No. 017022USAL), filed Oct. 26, 2012, both of whichapplications are hereby incorporated by reference herein.

FIELD

Embodiments disclosed herein relate to semiconductor processing. Morespecifically, embodiments disclosed herein relate to apparatus andmethods for material and thermal processing of semiconductor substrates.

BACKGROUND

Material processes and thermal processes are common in semiconductormanufacturing in order to fabricate electronic devices on a substrate.In an electronic device fabrication process, semiconductor substratesare often subjected to a material process which includes deposition,implantation, or etching, and a thermal process may be performed before,during or after the material process. In some thermal processes,substrates are heated utilizing radiant sources, such as lamps, thatdirect radiant energy to the substrate to anneal and/or perform a rapidthermal process (RTP) on the substrate after a material process.However, the thermal process is typically performed in a separatechamber, which requires transfer of the substrate to another chamber.During the material process the substrate may be heated. However, muchof the heat energy contained in the substrate may be lost to chambercomponents and transfer devices, such as robot blades, which reducesefficiency of the device fabrication process and increases process time.Machine utilization, the time a machine is operating to process asubstrate, is a critical factor in reducing the cost of each chipproduced. Thus, there is a continuing need for more efficientsemiconductor device fabrication processes and apparatus.

SUMMARY

Disclosed are methods and apparatus for treating a substrate utilizing aprocess chamber capable of deposition of material on a substrate. Thechamber is also utilized to heat the substrate before, during or afterdeposition. The chamber also includes an adapter plate that includes alamp mounting facility and a reflective surface for focusing radiantenergy to a surface of the substrate.

In one embodiment. An adapter plate for a deposition chamber isprovided. The adapter plate comprises a body, a mounting plate centrallylocated on the body, a first annular portion extending longitudinallyfrom a first surface of the mounting plate and disposed radially inwardfrom an outer surface of the mounting plate, a second annular portionextending longitudinally from an opposing second surface of the mountingplate and disposed radially inward from the outer surface of themounting plate, and a mirror-finished surface disposed on the interiorof the second annular portion, the mirror-finished surface having anaverage surface roughness of 6 Ra or less.

In another embodiment, an adapter plate for a deposition chamber isprovided. The adapter plate comprises a body having a first sidedisposed in a first plane and a second side opposite the first side, afirst sidewall coupled to the first surface, the first sidewall disposedin a second plane that is substantially orthogonal to the first plane, asecond sidewall coupled to the second surface, the second sidewalldisposed in the second plane, and an outwardly extending flange coupledintermediate of the first sidewall and the second sidewall.

In another embodiment, an adapter plate for a deposition chamber isprovided. The adapter plate comprises a body comprising a first annularportion having a first side disposed in a first plane and a secondannular portion having a second side disposed in the first planeopposite the first side, a first sidewall coupled to the first surface,the first sidewall disposed in a second plane that is substantiallyorthogonal to the first plane, a second sidewall coupled to the secondsurface, the second sidewall disposed in the second plane, and anoutwardly extending flange coupled intermediate of the first sidewalland the second sidewall, the outwardly extending flange having at leasta portion of a thermal control channel formed therein.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above-recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a schematic cross-sectional view of a deposition chamberaccording to one embodiment.

FIG. 2A is an isometric top view of the adapter plate of FIG. 1.

FIG. 2B is an isometric bottom view of the adapter plate of FIG. 2A.

FIG. 2C is a bottom plan view of the adapter plate of FIG. 2A.

FIG. 3 is a partial cross sectional view of the body of the adapterplate of FIG. 2A.

FIG. 4 is a side cross-sectional view of the adapter plate of FIG. 2Aalong lines 4-4 of FIG. 2C.

FIG. 5 is a side cross-sectional of the adapter plate of FIG. 2A alonglines 5-5 of FIG. 2C.

FIG. 6 is a side cross-sectional view of the adapter plate of FIG. 2Aalong lines 6-6 of FIG. 2C.

FIG. 7 is an enlarged sectional view of a portion of the adapter plateand the shield ring of FIG. 1.

FIG. 8A is an isometric top view of another embodiment of an adapterplate which may be utilized in the deposition chamber of FIG. 1.

FIG. 8B is an isometric bottom view of the adapter plate of FIG. 8A.

FIG. 9 is a schematic side cross-sectional view of a portion of anadapter plate showing various conductance zones formed in, and between,the adapter plate and adjacent components.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

FIG. 1 is a schematic cross-sectional view of a deposition chamber 100according to one embodiment. The deposition chamber 100 comprises a body101 having a lower sidewall 102, an upper sidewall 103, and a lidportion 104 defining a body 101 that encloses an interior volume 105thereof. An adapter plate 106 may be disposed between the lower sidewall102 and the upper sidewall 103. A portion of the adapter plate 106 mayinclude an outer surface 107 of the body 101. A substrate support, suchas a pedestal 108, is disposed in the interior volume 105 of thedeposition chamber 100. A substrate transfer port 109 is formed in thelower sidewall 102 for transferring substrates into and out of theinterior volume 105.

In one embodiment, the deposition chamber 100 comprises a sputteringchamber, also known as a physical vapor deposition (PVD) chamber,capable of depositing, for example, titanium, aluminum oxide, aluminum,copper, tantalum, tantalum nitride, tungsten, or tungsten nitride on asubstrate. Examples of suitable PVD chambers include the ALPS® Plus andSIP ENCORE® PVD processing chambers, both commercially available fromApplied Materials, Inc., Santa Clara, of Calif. It is contemplated thatprocessing chambers available from other manufactures may also utilizethe embodiments described herein.

In a deposition process, process gases may be flowed to the interiorvolume 105 from a gas source 110. The pressure of the interior volume105 may be controlled by a pumping device 112 in communication with theinterior volume 105. The lid portion 104 may support a sputtering source114, such as a target. The sputtering source 114 may be coupled to asource assembly 116 comprising magnets and a power supply for thesputtering source 114. A collimator 118 may be positioned in theinterior volume 105 between the sputtering source 114 and the pedestal108. A shield tube 120 may be in proximity to the collimator 118 andinterior of the lid portion 104. The collimator 118 includes a pluralityof apertures to direct gas and/or material flux within the interiorvolume 105. The collimator 118 may be mechanically and electricallycoupled to the shield tube 120. In one embodiment, the collimator 118 ismechanically coupled to the shield tube 120, such as by a weldingprocess, making the collimator 118 integral to the shield tube 120. Inanother embodiment, the collimator 118 may be electrically floatingwithin the chamber 100. In another embodiment, the collimator 118 may becoupled to an electrical power source and/or electrically coupled to thelid portion 104 of the deposition chamber 100.

The shield tube 120 may include a tubular body 121 having a recess 122formed in an upper surface thereof. The recess 122 provides a matinginterface with a lower surface of the collimator 118. The tubular body121 of the shield tube 120 may include a shoulder region 123 having aninner diameter that is less than the inner diameter of the remainder ofthe tubular body 121. In one embodiment, the inner surface of thetubular body 121 transitions radially inward along a tapered surface 124to an inner surface of the shoulder region 123. A shield ring 126 may bedisposed in the chamber adjacent to the shield tube 120 and intermediateof the shield tube 120 and the adapter plate 106. The shield ring 126may be at least partially disposed in a recess 128 formed by an opposingside of the shoulder region 123 of the shield tube 120. In one aspect,the shield ring 126 includes an annular portion 127 that may be axiallyprojecting. The annular portion 127 includes an inner diameter that isgreater than an outer diameter of the shoulder region 123 of the shieldtube 120. A radial flange 130 extends from the annular portion 127. Theradial flange 130 may be formed at an angle greater than about ninetydegrees (90°) relative to the inside diameter surface of the annularportion 127 of the shield ring 126. The radial flange 130 includes aprotrusion 132 formed on a lower surface thereof. The protrusion 132 maybe a circular ridge extending from the surface of the radial flange 130in an orientation that is substantially parallel to the inside diametersurface of the annular portion 127 of the shield ring 126. Theprotrusion 132 is generally adapted to mate with a recessed flange 134formed in an edge ring 136 disposed on the pedestal 108. The recessedflange 134 may be a circular groove formed in the edge ring 136. Theedge ring 136 may be utilized as a deposition ring during a reflowprocess or a silicidation process. The edge ring 136 may include one ormore reflective surfaces that focus energy toward a substrate surface.The engagement of the protrusion 132 and the recessed flange 134 centersthe shield ring 126 with respect to the longitudinal axis of thepedestal 108. The substrate 138 (shown supported on lift pins 140) iscentered relative to the longitudinal axis of the pedestal 108 bycoordinated positioning calibration between the pedestal 108 and a robotblade (not shown). In this manner, the substrate 138 may be centeredwithin the deposition chamber 100 and the shield ring 126 may becentered radially about the substrate 138 during processing.

In operation, a robot blade (not shown) having a substrate 138 thereonis extended through the substrate transfer port 109. The pedestal 108may be lowered to allow the substrate 138 to be transferred to the liftpins 140 extending from the pedestal 108. Lifting and lowering of thepedestal 108 and/or the lift pins 140 may be controlled by a drive 142coupled to the pedestal 108. The substrate 138 may be lowered onto asubstrate receiving surface 144 of the pedestal 108. With the substrate138 positioned on the substrate receiving surface 144 of the pedestal108, sputter deposition may be performed on the substrate 138. The edgering 136 may be electrically isolated from the substrate 138 duringprocessing. Therefore, the substrate receiving surface 144 may include aheight that is greater than a height of portions of the edge ring 136adjacent the substrate 138 such that the substrate 138 is prevented fromcontacting the edge ring 136. During sputter deposition, the temperatureof the substrate 138 may be the controlled by utilizing thermal controlchannels 146 disposed in the pedestal 108. Additionally, components ofthe deposition chamber 100 adjacent the substrate 138 during depositionare configured to provide an optimized volumetric gas flow. The gapsbetween components and through-holes formed in the adapter plate 106(shown in FIG. 2A as through-holes 226) form a plurality of conductancezones that provide a conductance value (i.e., conductance ratio (e.g.,inverse of flow resistance in terms L/D)) of about 7.54 to about 11.2 atabout 400 degrees Celsius (° C.).

After sputter deposition, the substrate 138 may be elevated utilizingthe lift pins 140 to a position that is spaced away from the pedestal108. The elevated location may be proximate one or both of the shieldring 126 and a reflector ring 148 adjacent to the adapter plate 106. Theadapter plate 106 includes one or more lamps 150 coupled theretointermediate of a lower surface of the reflector ring 148 and areflective surface 152 of the adapter plate 106. The reflective surface152 may be curved or concave. The lamps 150 provide radiant energy inthe visible or near visible wavelengths, such as in the infra-red (IR)and/or ultraviolet (UV) spectrum. The radiant energy from the lamps 150is focused toward the backside (i.e., lower surface) of the substrate138 to heat the substrate 138 and the material deposited thereon.Reflective surfaces on the chamber components surrounding the substrate138, such as the reflective surface 152 of the adapter plate 106, andreflective surfaces of the edge ring 136, serve to focus the radiantenergy toward the backside of the substrate 138 and away from otherchamber components where the energy would be lost and/or not utilized.The adapter plate 106 may be coupled to a coolant source 154 to controlthe temperature of the adapter plate 106 during heating.

The substrate 138 may be heated to a first temperature of about 300° C.to about 400° C., such as about 350° C., in a few seconds. Heating ofthe substrate 138 to the first temperature may enable a reflow processor a silicidation process. The reflow process is utilized to reduceoverhang of metal in recesses of the substrate 138. The silicidationprocess may be utilized to drive reactions between metal and silicon.

The heating method described herein has advantages with respect to ametal deposition process. When metal is deposited on a substratesurface, the surface gains reflectivity. Absorption of radiant energy isgenerally reduced on a metalized surface. Irradiation of the metalizedsurface is less effective than heating the surface opposite themetalized surface, for example the substrate back side. Improved energyabsorption of silicon improves energy efficiency of the thermaltreatment process, as opposed to the heating the metalized surface.

After heating the substrate to the first temperature, the substrate 138is lowered to a position on the substrate receiving surface 144 of thepedestal 108. The substrate 138 may be rapidly cooled utilizing thethermal control channels 146 in the pedestal 108 via conduction. Thetemperature of the substrate may be ramped down from the firsttemperature to a second temperature in a matter of seconds to a minute.The second temperature may be about room temperature, such as about 23°C. to about 30° C., for example, about 25° C. The substrate 138 may beremoved from the deposition chamber 100 through the substrate transferport 109 for further processing.

FIG. 2A is an isometric top view of the adapter plate 106 of FIG. 1.FIG. 2B is an isometric bottom view of the adapter plate 106 of FIG. 2A.FIG. 2C is a bottom plan view of the adapter plate 106 of FIG. 2A. Theadapter plate 106 includes a body 200 having a flange 202, which maycomprise an outer surface 107 of the chamber 100 of FIG. 1. The flange202 may be a mounting plate that is centrally located and extendingradially from a first annular portion 204 and a second annular portion206. Each of the first annular portion 204 and the second annularportion 206 may be disposed radially inward of the outer surface 107 ofthe flange 202. The flange 202 may include openings 208 formed between afirst surface 207A and an opposing second surface 207B. The openings 208are utilized for fasteners (not shown) to facilitate coupling of thebody 200 to the deposition chamber 100 (shown in FIG. 1). The flange 202may also include a thermal control channel 210 formed therein (shown inphantom in FIG. 2B). The thermal control channel 210 is coupled to acoolant source 154 at an inlet 212 of the thermal control channel. Anoutlet 214 of the thermal control channel 210 may be coupled to areservoir 216, which may be a heat exchanger or a drain. The body 200may be fabricated from a metallic material, such as aluminum.

Referring to FIG. 2B, the body 200 may comprise one or more radialrecesses 218 formed at least partially in the first annular portion 204.Each of the radial recesses 218 may include an opening 220 formedthrough the first annular portion 204. The radial recesses 218 areutilized for a lamp mounting device 219 for holding and providing powerto a lamp 150 (both are shown in FIG. 2A in phantom). Each of the lamps150 may be U-shaped and the ends of the lamps 150 interface with asocket disposed on the lamp mounting device 219. Each of the radialrecesses 218 may also include an elongated channel 222 formed in aninwardly extending surface 224 of the first annular portion 204. Theelongated channel 222 is utilized for attachment of electrical cables tothe lamp mounting device 219 disposed in the radial recesses 218. A bore223 may be formed in the first annular portion 204 to provide access forcables from an exterior of the body 200 to the elongated channel 222,and to the radial recesses 218.

In one aspect, each of the radial recesses 218 are disposed at opposingsides of the body 200 (e.g., about 180 degrees from one another) tosupport ends of a semi-circular lamp. The elongated channel 222 may beformed as a substantially linear groove that is tangential to a radiusof the inwardly extending surface 224 of the first annular portion 204.The first annular portion 204 may also include a plurality ofthrough-holes 226 formed through the inwardly extending surface 224 ofthe first annular portion 204. Each of the through-holes 226 include acenterline that may be parallel to a longitudinal axis 228 of the body200. The through-holes 226 are utilized for optimized volumetric flow(i.e., increased gas conductance) during processing. Each of thethrough-holes 226 may include a diameter of about 0.40 inches to about0.54 inches and the first annular portion 204 may include about 30 toabout 70 through-holes 226. During processing, flow in the gap betweenthe reflector ring 148 and the radial flange 130 in combination withflow through the through-holes 226 provide a combined conductance valueof about 14.22 at about 400 degrees C.

The body 200 may also include a plurality of slots 230 formed in thereflective surface 152 (shown in FIG. 2A). The slots 230 are configuredto couple to a support member 300 (shown in FIG. 3) that supports thelamp 150. The inwardly extending surface 224 of the first annularportion 204 may also include a plurality of axial recesses 232. Theaxial recesses 232 are utilized to receive a fastener fixture 305 (shownin FIG. 3) to secure the support member 300. Each of the slots 230 maybe spaced at intervals of about 40 degrees to about 60 degrees from eachother.

In one embodiment, the reflective surface 152 is concave and includes asmooth surface. The reflective surface 152 may be formed on a radius ofabout 8 inches. In one aspect, the reflective surface 152 has a surfaceroughness (average surface roughness (Ra)) of about 6 or less. In oneembodiment, the reflective surface 152 comprises a reflectance of about85 percent (%) at an angle of incidence of about 85 degrees. In anotherembodiment, the reflective surface 152 comprises a reflectance of about72% at an angle of incidence of about 20 degrees. In another embodiment,the reflective surface 152 comprises a reflectance of about 72% at anangle of incidence of about 60 degrees.

FIG. 3 is a partial cross sectional view of the body 200 of the adapterplate 106 of FIG. 2A. A support member 300 is shown in cross-section andis disposed in a slot 230. The support member 300 includes athrough-hole 310 that receives a fastener 315. The fastener 315 issecured to a fastener fixture 305 that is received in the axial recess232. The support member 300 also includes a slot 320 that receives theoutside diameter of the lamp 150 and at least partially supports thelamp 150. The body 200 also includes an interior shelf portion 325 thatis adjacent a converging portion 330. The interior shelf portion 325comprises a first interior surface 335 and a second interior surface340. The first interior surface 335 is disposed in a first plane and thesecond interior surface 340 is disposed in a plane that is about 30degrees to about 60 degrees relative to the plane of the first interiorsurface 335. At least a portion of the through-holes 226 are formed ineach of the first interior surface 335 and the second interior surface340 of the interior shelf portion 325.

FIG. 4 is a side cross-sectional view of the adapter plate 106 of FIG.2A along lines 4-4 of FIG. 2C. The body 200 of the adapter plate 106comprises a lower surface, such as a first side 400A, and an uppersurface, such as a second side 400B. A portion of the elongated channel222 is shown in the first side 400A. The body 200 includes otheropenings (not shown) formed therein to provide routing of electricalcables from the elongated channel 222 to the lamp mounting device 219(shown in FIG. 2A). The first side 400A and the second side 400B aregenerally parallel. The first side 400A transitions to a lower sidewallsurface, such as a first sidewall 405, that is substantially normal tothe plane of the first side 400A. The first sidewall 405 transitions toan outwardly extending flange 410. The outwardly extending flange 410includes a lower surface, such as a first mounting surface 415, anexterior sidewall surface 420 and an upper surface, such as a secondmounting surface 425. The first mounting surface 415 couples to theexterior sidewall surface 420 at an angle that is substantially normalrelative to the plane of the first mounting surface 415. The exteriorsidewall surface 420 couples to the second mounting surface 425 at anangle that is substantially normal relative to the plane of the exteriorsidewall surface 420. Thus, the first mounting surface 415 and thesecond mounting surface 425 are substantially parallel. Likewise, thefirst mounting surface 415 and the second mounting surface 425 aresubstantially parallel with planes of the first side 400A and/or thesecond side 400B. The second mounting surface 425 transitions to anupper sidewall surface, such as a second sidewall 430, at an angle thatis substantially normal relative to the plane of the second mountingsurface 425. Thus, the first sidewall 405 is substantially parallel tothe second sidewall 430.

FIG. 5 is a side cross-sectional of the adapter plate 106 of FIG. 2Aalong lines 5-5 of FIG. 2C. As described in FIG. 3, the body 200 of theadapter plate 106 comprises an interior shelf portion 325 having thethrough holes formed at least partially therein. The interior shelfportion 325 comprises the first interior surface 335 that may besubstantially normal to the plane of the first side 400A and/or thesecond side 400B of the body 200. The first interior surface 335transitions to the converging portion 330 which includes a planarsurface 500. In one embodiment, the planar surface 500 is disposed at anobtuse angle a relative to a plane of the second side 400B. The angle amay be about 100 degrees to about 120 degrees. In another embodiment,the first interior surface 335 may transition to the converging portion330 by a concave intersection 505, which may be a radius of about 1inch.

FIG. 6 is a side cross-sectional view of the adapter plate 106 of FIG.2A along lines 6-6 of FIG. 2C. In this view, the elongated channel 222is shown through the body 200. One of the through-holes 226 is alsoshown formed through the body 200. Also shown is a cap plate 600disposed on the thermal control channel 210. The cap plate 600 may beformed from aluminum and be fastened to the body 200 by welding.

FIG. 7 is an enlarged sectional view of a portion of the adapter plate106, the reflector ring 148, and the shield ring 126. In one embodiment,the reflector ring 148 rests on a surface of the adapter plate 106adjacent the reflective surface 152 and the lamp 150. In one aspect, agap 700 is provided between an inner surface 705 of the adapter plate106 and an outer surface 710 of the reflector ring 148. The innersurface 705 may include a dimension (e.g., diameter) that is slightlysmaller than a diameter of the outer surface 710 such that the gap 700is continuous about the periphery of the reflector ring 148. Duringprocessing, the reflector ring 148 may be heated from energy from thelamp 150, which may cause the reflector ring 148 to expand. The gap 700allows free expansion until the gap 700 is consumed. Any additional heatinput will result in decreased contact resistance between the reflectorring 148 and the surfaces of the adapter plate 106 which transfers heataway from the reflector ring 148. In one aspect, the gap 700 is aself-limiting mechanism that limits the maximum temperature of thereflector ring 148 to about 100 degrees C., or less, during processing.

FIG. 8A is an isometric top view of another embodiment of an adapterplate 800, which may be utilized in the deposition chamber 100 ofFIG. 1. FIG. 8B is an isometric bottom view of the adapter plate 800 ofFIG. 8A. The adapter plate 800 is similar to the adapter plate 106described in FIGS. 2A-7 with a few exceptions, and some of the referencenumerals common to the adapter plate 800 and the adapter plate 106 willnot be explained for brevity.

In this embodiment, the adapter plate 800 includes the reflectivesurface 152 and lamps 150 (shown in phantom) that are disposed insupport members 300. The adapter plate 800 also includes a steppedinterior portion 802 disposed between the reflective surface 152 and theinterior shelf portion 325. Additionally, the through-holes 226 areformed completely within the interior shelf portion 325. In thisembodiment, first openings 803A of the through-holes 226 include acircular shape as opposed to a partial elliptical shape as described inthe adapter plate 106 shown in FIGS. 2A-7.

The stepped interior portion 802 includes a first shoulder portion 805disposed between the reflective surface 152 and a first interior wall810. The first shoulder portion 805 extends radially outward from thereflective surface 152 and interfaces with the first interior wall 810at a substantially normal angle (e.g., 85 degrees to 95 degrees). Asecond interior wall 815, which has a radial dimension (e.g., distancefrom the longitudinal axis 228) that is slightly greater than a radialdimension of the first interior wall 810, interfaces with the interiorshelf portion 325 at a substantially normal angle. A chamfer 820 may bedisposed between the first interior wall 810 and the second interiorwall 815.

FIG. 8B is an isometric bottom view of the adapter plate 800 of FIG. 8A.Second openings 803B of the through-holes 226 are shown on the inwardlyextending surface 224 of the first annular portion 204. Also shown aretwo elongated channels 222 formed in an inwardly extending surface 224of the first annular portion 204. Each of the elongated channels 222include the bore 223 where an electrical connector 825 may be disposed.The electrical connector 825 includes a conduit 830 having a cap 835 anda plug 840. The conduit 830 houses wires and electrical connectors thatprovide an electrical power connection for the lamp mounting device 219(shown in FIG. 2A) and the lamps 150 (shown in FIG. 8A). The electricalconnector 825 is secured in the first annular portion 204 by a retainer845.

FIG. 9 is a schematic side cross-sectional view of a portion of anadapter plate 900 showing various conductance zones 905A-905E formed in,and between, the adapter plate 900 and adjacent components, according toembodiments of the adapter plate 106 of FIGS. 2A-7, or the adapter plate800 of FIGS. 8A and 8B. A first conductance zone 905A is formed betweena perimeter of the annular portion 127 of the shield ring 126 and aperipheral surface of the shoulder region 123 of the shield tube 120. Asecond conductance zone 905B is formed in a space between surfaces ofthe converging portion 330 of the body 200 of the adapter plate 900 andan outer surface of the periphery of the annular portion 127 of theshield ring 126. A third conductance zone 905C is formed in thethrough-holes 226 (only one is shown). A fourth conductance zone 905D isformed between the second interior surface 340 of the body 200 of theadapter plate 106 and an outer peripheral surface of the shield ring126. A fifth conductance zone 905E is formed between an inner peripheralsurface of the reflector ring 148 and an outer surface of a body of thepedestal 108. Spacing between the surfaces of adjacent components thatform the conductance zones 905A, 905B, 905D, 905E, as well as thedimensions of the components (such as the diameter of the through-holes226), may be provided to produce a desired conductance, which optimizespressure during processing.

Testing of the deposition chamber 100 was conducted and totalconductance values for the zones 905A-905E were calculated fromresistance values of each of the zones 905A-905E at various processconditions, such as the distance between the sputtering source 114 andthe substrate 138 (both shown in FIG. 1), as well as the approximatetemperature of the shield ring 126. In tabulating the results oftesting, the conductance zones 905D and 905E are considered in parallelto conductance zone 905C, and are added to conductance zones 905A, 905B,in series.

Exemplary conductance values of the adapter plate 106 of FIGS. 2A-7 areas follows. One test result, conducted with the approximate temperatureof the shield ring 126 being about 400 degrees Celsius and a spacingbetween the sputtering source 114 and the substrate 138 being about 393mm, yielded a total conductance of about 1.56. Another test result,conducted with the approximate temperature of the shield ring 126 beingabout 25 degrees Celsius and a spacing between the sputtering source 114and the substrate 138 being about 393 mm, yielded a total conductance ofabout 2.96. Another test result, conducted with the approximatetemperature of the shield ring 126 being about 400 degrees Celsius and aspacing between the sputtering source 114 and the substrate 138 beingabout 405 mm, yielded a total conductance of about 2.073.

Exemplary conductance values of the adapter plate 800 of FIGS. 8A and 8Bare as follows. One test result, conducted with the approximatetemperature of the shield ring 126 being about 400 degrees Celsius and aspacing between the sputtering source 114 and the substrate 138 beingabout 393 mm, yielded a total conductance of about 7.534. Another testresult, conducted with the approximate temperature of the shield ring126 being about 25 degrees Celsius and a spacing between the sputteringsource 114 and the substrate 138 being about 393 mm, yielded a totalconductance of about 6.678. Another test result, conducted with theapproximate temperature of the shield ring 126 being about 400 degreesCelsius and a spacing between the sputtering source 114 and thesubstrate 138 being about 405 mm, yielded a total conductance of about11.136.

While the foregoing is directed to embodiments of the invention, otherand further embodiments of the invention may be devised withoutdeparting from the basic scope thereof.

What is claimed is:
 1. An adapter plate for a deposition chamber, theadapter plate comprising: a body; a mounting plate centrally located onthe body; a first annular portion extending longitudinally from a firstsurface of the mounting plate and disposed radially inward from an outersurface of the mounting plate; a second annular portion extendinglongitudinally from an opposing second surface of the mounting plate anddisposed radially inward from the outer surface of the mounting plate;and a mirror-finished surface disposed on the interior of the secondannular portion, the mirror-finished surface having an average surfaceroughness of 6 Ra or less.
 2. The adapter plate of claim 1, wherein themirror-finished surface comprises a reflectance of about 70 percent toabout 90 percent.
 3. The adapter plate of claim 2, wherein themirror-finished surface is curved.
 4. The adapter plate of claim 2,wherein the mirror-finished surface comprises a reflectance of about 85percent at an angle of incidence of about 85 degrees.
 5. The adapterplate of claim 2, wherein the mirror-finished surface comprises areflectance of about 72 percent.
 6. The adapter plate of claim 1,wherein the the body comprises: a first side disposed in a first planeand a second side opposite the first side; and a first sidewall coupledto the first surface, the first sidewall disposed in a second plane thatis substantially orthogonal to the first plane.
 7. The adapter plate ofclaim 6, wherein the body further comprises: a second sidewall coupledto the second surface, the second sidewall disposed in the second plane;and an outwardly extending flange coupled intermediate of the firstsidewall and the second sidewall
 8. The adapter plate of claim 1,wherein the body includes a thermal control channel formed therein. 9.The adapter plate of claim 8, wherein the thermal control channelsubstantially circumscribes one or both of the first annular portion andthe second annular portion.
 10. The adapter plate of claim 8, whereinthe thermal control channel comprises a cap plate forming one side ofthe thermal control channel.
 11. An adapter plate for a depositionchamber, the adapter plate comprising: a body having a first sidedisposed in a first plane and a second side opposite the first side; afirst sidewall coupled to the first surface, the first sidewall disposedin a second plane that is substantially orthogonal to the first plane; asecond sidewall coupled to the second surface, the second sidewalldisposed in the second plane; and an outwardly extending flange coupledintermediate of the first sidewall and the second sidewall.
 12. Theadapter plate of claim 11, wherein the second side is parallel to thefirst plane.
 13. The adapter plate of claim 12, wherein the firstsidewall comprises a first annular portion and the second sidewallcomprises a second annular portion.
 14. The adapter plate of claim 13,wherein the first annular portion and the second annular portioncomprise an interior shelf portion.
 15. The adapter plate of claim 13,wherein the second annular portion comprises a converging portionopposite the second sidewall.
 16. The adapter plate of claim 12, whereinthe body comprises a thermal control channel formed at least partiallyin the outwardly extending flange.
 17. An adapter plate for a depositionchamber, the adapter plate comprising: a body comprising a first annularportion having a first side disposed in a first plane and a secondannular portion having a second side disposed in the first planeopposite the first side; a first sidewall coupled to the first surface,the first sidewall disposed in a second plane that is substantiallyorthogonal to the first plane; a second sidewall coupled to the secondsurface, the second sidewall disposed in the second plane; and anoutwardly extending flange coupled intermediate of the first sidewalland the second sidewall, the outwardly extending flange having at leasta portion of a thermal control channel formed therein.
 18. The adapterplate of claim 17, wherein the first annular portion includes aninterior surface comprising a mirror-finished surface.
 19. The adapterplate of claim 18, wherein the mirror-finished surface includes anaverage surface roughness of 6 Ra or less.
 20. The adapter plate ofclaim 18, wherein second annular portion comprises a converging surfacethat is disposed at an obtuse angle relative to the second surface.